Samsung 250GB 2.5 SATA Solid State Drive 850 EVO Series (MZ-75E250B/AM)

Samsung 250GB 2.5 SATA Solid State Drive 850 EVO Series (MZ-75E250B/AM)

Brand Samsung
Model MZ-75E250B/AM

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Description

Brand
Samsung
Model
MZ-75E250B/AM
Other
General
Device Type
Solid state drive - internal
Capacity
250 GB
Hardware Encryption
Yes
Form Factor
2.5"
Interface
SATA 6Gb/s
Buffer Size
512 MB
Features
Hardware Full Disk Encryption (FDE), TRIM support, Garbage Collection technology, DRAM cache, DevSleep mode, 3D V-NAND Technology, Dynamic Thermal Guard protection, TurboWrite Technology, Samsung MGX Controller, S.M.A.R.T., 256-bit AES, IEEE 1667
Width
2.7 in
Depth
3.9 in
Height
0.3 in
Weight
1.44 oz
Performance
Drive Transfer Rate
600 MBps (external)
Internal Data Rate
540 MBps (read) / 520 MBps (write)
4KB Random Read
97000 IOPS
Maximum 4KB Random Write
88000 IOPS
Reliability
MTBF
2,000,000 hours
Expansion & Connectivity
Interfaces
1 x SATA 6 Gb/s - 7 pin Serial ATA
Compatible Bay
2.5"
Power
Power Consumption
50 mW (idle) ¦ 2 mW (sleep) ¦ 2.4 Watt (active) ¦ 2.4 Watt (maximum)
Software & System Requirements
Software Included
Samsung Magician Software, Samsung Data Migration
Manufacturer Warranty
Service & Support
Limited warranty - 5 years
Environmental Parameters
Min Operating Temperature
32 °F
Max Operating Temperature
158 °F
Humidity Range Operating
5 - 95% (non-condensing)
Shock Tolerance (non-operating)
1500 g @ 0.5 ms half-sine pulse
Vibration Tolerance (non-operating)
20 g @ 20-2000 Hz
Samsung 250GB Solid State Drive 850 EVO Series 2.5 SATA
Here comes the world's first 3D Vertical NAND Flash Memory that revolutionizes performance of today's SSDs?the Samsung EVO 250GB SSD!
Samsung's ground-breaking 3D VNAND Flash Memory embedded in the 250GB Samsung 850 EVO SSD, promises you more speed, endurance, capacity, and power efficiency. Using the advanced Vertical Interconnect Process technology, Samsung pulls out an effective way of three-dimensionally and vertically stacking 32 cell layers per NAND flash memory chip where each chip provides 128Gbs of memory storage.
The Samsung SSD MZ-75E250B also allows you to maximize your everyday computing experience with the TurboWrite technology. With incredible read and write performance, you'll surely get the job done quickly and efficiently. The EVO 850 also keeps your data protected at all times through the latest hardware-based full disk encryption engine, the AES-256-bit. In addition, the integrated Dynamic Thermal Guard also helps in protecting the integrity of your data by monitoring and maintaining ideal temperatures for the drive to operate in best conditions.
The EVO 850 is equipped with an energy efficiency controller that is specifically designed and boosted for 3D VNAND which supports DevSleep. So even when you're working on your computer for longer periods of time, you only not increase your productivity; you also save on your power bill.
So take advantage of one of today's fastest and most powerful Solid State Drives?Samsung 250GB 2.5 SATA Solid State Drive 850 EVO Series! Get it here at MacMall!Also available, Samsung 500GB EVO SSD

850 EVO 250GB 2.5-Inch SATA III Internal SSD
  • Optimized performance for everyday computing needs
  • Sequential read speed 550 MB/s; Sequential write speed 520 MB/s; Random read speed 100K; Random write speed 90K
  • Energy efficient - improves battery life by up to 50 minutes vs. hard disk drives
  • Worry-free data security with AES 256-bit, TCG/Opal v.2 and Microsoft eDrive full-disk encryption
The world's first 3D Vertical NAND (V-NAND) SSD- the Samsung SSD 850 EVO
Upgrade virtually every aspect of your computer’s performance with Samsung’s new 850 EVO, designed with state-of-the-art SSD advancements including 3D V-NAND technology. As the next generation beyond the bestselling 840 EVO, you’ll get the 850 EVO’s new 3 dimensional chip design that enables superior performance, greater reliability and superior energy efficiency so you can work and play faster and longer than ever before. 3D V-NAND Technology
Samsung’s innovative 3D V-NAND flash memory architecture breaks through density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.

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